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This paper explores the integration of computer science (CS) and computational thinking (CT) into middle and high school math classes by teachers who received pre-service CS training. Focusing on three participants within a larger study, the paper describes what they find relevant from their programs, how they apply CS/CT concepts and practices into their math instruction, and what role their value of CS/CT plays in their pedagogical approaches. Data were collected through two interviews and analyzed to present case studies. Findings describe how teachers’ integration of CS/CT varies from algorithmic thinking to prioritizing the process over the solution. Findings show the teachers’ motivation to bring CS to their students, whether by incorporating CS/CT practices in their math classroom or advocating for stand-alone classes. Recommendations for pre-service CS/CT-focused teacher preparation programs include greater emphasis on integration, culturally responsive teaching practices, and learning how to teach in addition to what to teach. 

Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence properties, but strained silicon-vacancy centers have been shown to operate at temperatures beyond 1 K without phonon-mediated decoherence. In this work, we combine high-stress silicon-nitride thin films with diamond nanostructures to reproducibly create statically strained silicon-vacancy color centers (mean ground state splitting of 608 GHz) with strain magnitudes of ∼4×10−4. Based on modeling, this strain should be sufficient to allow for operation of a majority silicon-vacancy centers within the measured sample at elevated temperatures (1.5 K) without any degradation of their spin properties. This method offers a scalable approach to fabricate high-temperature operation quantum memories. Beyond silicon-vacancy centers, this method is sufficiently general that it can be easily extended to other platforms as well. 

We study the influence of a membrane filter's internal pore structure on its flow and adsorptive fouling behaviour. Membrane performance is measured via (1) comparison between volumetric flow rate and throughput during filtration and (2) control of concentration of foulants at membrane pore outlets. Taking both measures into account, we address the merits and drawbacks of selected membrane pore structures. We first model layered planar membrane structures with intra-layer pore connections, and present comparisons between non-connected and connected structures. Our model predicts that membrane filters with connected pore structures lead to higher total volumetric throughput than those with non-connected structures, over the filter lifetime. We also provide a sufficient criterion for the concentration of particles escaping the filter to achieve a maximum in time (indicative of a membrane filter whose particle retention capability can deteriorate). Additionally, we find that the influence of intra-layer heterogeneity in pore-size distribution on filter performance depends on the connectivity properties of the pores.